Mfr
Rohm Semiconductor
Series
–
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current – Continuous Drain (Id) @ 25°C
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
104mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 18 V
Vgs (Max)
+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds
785 pF @ 800 V
FET Feature
–
Power Dissipation (Max)
165W (Tc)
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247N
Package / Case
TO-247-3
Base Product Number
SCT3080
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